Specific features of the charge neutralization of silicon carbide in sintering by electron beam in the forevacuum range of pressures

It is shown that a noticeable role in the electron beam charge neutralization in the course of electron-beam sintering of compacted silicon carbide samples is played, as the sample temperature increases, by the electrical conductivity of a sample being sintered, as well as by thermionic emission from its surface. Experimental results obtained for compacted silicon carbide are used to determine its energy gap width and the electron work function.