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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 16, Pages 8–14
(Mi pjtf7802)
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This article is cited in 2 scientific papers (total in 2 papers)
Studying transitions between different regimes of current oscillations generated in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures
A. O. Selskiiab, A. A. Koronovskiiab, O. I. Moskalenkoab, A. E. Khramovab, T. M. Fromholdc, M. T. Greenawayc, A. G. Balanovabd a Yuri Gagarin State Technical University of Saratov
b Saratov State University
c School of Physics and Astronomy, The University of Nottingham, Nottingham NG7 2RD, UК
d Department of Physics, Loughborough University, Loughborough, LE11 3TU, UK
Abstract:
The mechanisms of transitions between different regimes of current oscillations in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures have been studied. At relatively low temperatures, an increase in the applied voltage leads to a period-doubling bifurcation that causes a change in the dynamic regime. At increased temperatures, the transition takes place with the quenching of current oscillations.
Received: 08.08.2014
Citation:
A. O. Selskii, A. A. Koronovskii, O. I. Moskalenko, A. E. Khramov, T. M. Fromhold, M. T. Greenaway, A. G. Balanov, “Studying transitions between different regimes of current oscillations generated in a semiconductor superlattice in the presence of a tilted magnetic field at various temperatures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:16 (2015), 8–14; Tech. Phys. Lett., 41:8 (2015), 768–770
Linking options:
https://www.mathnet.ru/eng/pjtf7802 https://www.mathnet.ru/eng/pjtf/v41/i16/p8
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