Electrical and optical properties of nanosized films of doped zinc and indium oxides deposited by RF magnetron sputtering at room temperature

We have compared the electrical and optical properties of nanosized films of tin-doped indium oxide (ITO) and aluminum-doped zinc oxide (AZO) deposited on silicon and glass substrates by low-power RF magnetron sputtering at room temperature. Dependences of the resistivity and optical transmission coefficient of deposited oxides on the RF radiation power are presented. The plots of resistivity versus RF sputtering power for both oxides are nonlinear, with a minimum in the region of 50 W. For AZO, this minimum has been observed for the first time. The minimum value of resistivity for AZO is about 2.9 $\cdot$ 10$^{-3}$ $\Omega$ $\cdot$ cm and that for ITO is about 5.4 $\cdot$ 10$^{-4}$ $\Omega$ $\cdot$ cm. Both oxides are characterized by high optical transmission coefficients, close to 90% in a wavelength range of 500–1000 nm.