|
|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 18, Pages 8–15
(Mi pjtf7830)
|
|
|
|
This article is cited in 2 scientific papers (total in 2 papers)
Mapping of laser diode radiation intensity by atomic-force microscopy
P. A. Alekseeva, M. S. Dunaevskiiab, S. O. Slipchenkoa, A. A. Podoskina, I. S. Tarasova a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Abstract:
The distribution of the intensity of laser diode radiation has been studied using an original method based on atomic-force microscopy (AFM). It is shown that the laser radiation intensity in both the near field and transition zone of a high-power semiconductor laser under room-temperature conditions can be mapped by AFM at a subwavelength resolution. The obtained patterns of radiation intensity distribution agree with the data of modeling and the results of near-field optical microscopy measurements.
Received: 26.03.2015
Citation:
P. A. Alekseev, M. S. Dunaevskii, S. O. Slipchenko, A. A. Podoskin, I. S. Tarasov, “Mapping of laser diode radiation intensity by atomic-force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:18 (2015), 8–15; Tech. Phys. Lett., 41:9 (2015), 870–873
Linking options:
https://www.mathnet.ru/eng/pjtf7830 https://www.mathnet.ru/eng/pjtf/v41/i18/p8
|
|