Modeling the deflection of relativistic electrons in a bent silicon crystal

The deflection of electrons with energies 855 MeV and 6.3 GeV in planar (111) channels of a bent silicon crystal has been numerically simulated using a TROPICS computer code with atomic diffusion coefficient constructed in the Doyle–Turner approximation of the isolated atom potential. It is established that the atomic diffusion coefficient tends to a minimum value in the region of maximum nuclear density of atomic chain, where the Kitagawa–Ohtsuki diffusion coefficient reaches a maximum value.