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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 19, Pages 73–80 (Mi pjtf7853)  
Single-crystal GaN/AlN layers on CVD diamond

O. I. Khrykina, Yu. N. Drozdova, M. N. Drozdova, P. A. Yuninab, V. I. Shashkina, S. A. Bogdanovc, A. B. Muchnikovc, A. L. Vikharevc, D. B. Radishevc

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b National Research Lobachevsky State University of Nizhny Novgorod
c Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod, 603950, Russia
Full-text PDF (506 kB)
Abstract: Original approach to fabricating a GaN/AlN/nanocrystalline diamond structure has been suggested and implemented. The stages of deposition of a structure of this kind include the following: (a) growth of nanocrystalline CVD-diamond on single-crystal AlN (preliminarily grown on a silicon substrate), (b) etch removal of the silicon substrate, and (c) growth of single-crystal GaN on the surface of single-crystal AlN. Single-crystal gallium nitride with a width of the X-ray rocking curve for the (0002) reflection of 0.35$^\circ$ was obtained on a nanocrystalline-diamond substrate.
Received: 05.05.2015
English version:
Technical Physics Letters, 2015, Volume 41, Issue 10, Pages 954–956
DOI: https://doi.org/10.1134/S1063785015100065
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. I. Khrykin, Yu. N. Drozdov, M. N. Drozdov, P. A. Yunin, V. I. Shashkin, S. A. Bogdanov, A. B. Muchnikov, A. L. Vikharev, D. B. Radishev, “Single-crystal GaN/AlN layers on CVD diamond”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015), 73–80; Tech. Phys. Lett., 41:10 (2015), 954–956
Citation in format AMSBIB
\Bibitem{KhrDroDro15}
\by O.~I.~Khrykin, Yu.~N.~Drozdov, M.~N.~Drozdov, P.~A.~Yunin, V.~I.~Shashkin, S.~A.~Bogdanov, A.~B.~Muchnikov, A.~L.~Vikharev, D.~B.~Radishev
\paper Single-crystal GaN/AlN layers on CVD diamond
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 41
\issue 19
\pages 73--80
\mathnet{http://mi.mathnet.ru/pjtf7853}
\elib{https://elibrary.ru/item.asp?id=24196541}
\transl
\jour Tech. Phys. Lett.
\yr 2015
\vol 41
\issue 10
\pages 954--956
\crossref{https://doi.org/10.1134/S1063785015100065}
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