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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 19, Pages 81–89 (Mi pjtf7854)  
This article is cited in 4 scientific papers (total in 4 papers)

The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$

A. I. Belova, A. N. Mikhaylova, D. S. Koroleva, V. A. Sergeeva, E. V. Okulicha, I. N. Antonova, A. P. Kasatkina, E. G. Gryaznovab, A. P. Yatmanovb, O. N. Gorshkova, D. I. Tetelbauma

a Lobachevsky State University of Nizhny Novgorod
b Sedakov Research Institute for Measurement Systems, Nizhny Novgorod, 603950, Russia
Full-text PDF (230 kB) Citations (4)
Abstract: The effect of irradiation with H$^+$ and Ne$^+$ ions with an energy of 150 keV on memristive Au/SiO$_x$/TiN/Ti structures, which were obtained by magnetron sputtering and exhibited a reproducible resistive switching effect, is studied. It is demonstrated that the low and high resistance states remain unchanged up to a dose of 1 $\cdot$ 10$^{16}$ cm$^{-2}$ in the case of irradiation with H$^+$ ions and a dose of $\sim$ 3 $\cdot$ 10$^{15}$ cm$^{-2}$ under irradiation with Ne$^+$ ions. The obtained results demonstrate the high tolerance of parameters of the studied memristive structures to both ionizing radiation and displacement damage.
Received: 05.05.2015
English version:
Technical Physics Letters, 2015, Volume 41, Issue 10, Pages 957–960
DOI: https://doi.org/10.1134/S106378501510003X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, E. V. Okulich, I. N. Antonov, A. P. Kasatkin, E. G. Gryaznov, A. P. Yatmanov, O. N. Gorshkov, D. I. Tetelbaum, “The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal–insulator–metal memristive structures based on SiO$_x$”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:19 (2015), 81–89; Tech. Phys. Lett., 41:10 (2015), 957–960
Citation in format AMSBIB
\Bibitem{BelMikKor15}
\by A.~I.~Belov, A.~N.~Mikhaylov, D.~S.~Korolev, V.~A.~Sergeev, E.~V.~Okulich, I.~N.~Antonov, A.~P.~Kasatkin, E.~G.~Gryaznov, A.~P.~Yatmanov, O.~N.~Gorshkov, D.~I.~Tetelbaum
\paper The effect of irradiation with H$^+$ and Ne$^+$ ions on resistive switching in metal--insulator--metal memristive structures based on SiO$_x$
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2015
\vol 41
\issue 19
\pages 81--89
\mathnet{http://mi.mathnet.ru/pjtf7854}
\elib{https://elibrary.ru/item.asp?id=24196542}
\transl
\jour Tech. Phys. Lett.
\yr 2015
\vol 41
\issue 10
\pages 957--960
\crossref{https://doi.org/10.1134/S106378501510003X}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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