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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2015, Volume 41, Issue 23, Pages 15–23
(Mi pjtf7901)
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This article is cited in 6 scientific papers (total in 6 papers)
Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate
D. A. Kudriashov, A. S. Gudovskikh, A. M. Mozharov, A. D. Bolshakov, I. S. Mukhin, Zh. I. Alferov St. Petersburg Academic University, Russian Academy of Sciences, St. Petersburg, 194021, Russia
Abstract:
Design and operation modes of double-junction monolithic lattice-matched solar cells based on the ZnSiP$_2$/Si system of materials have been calculated. The effect of the photoactive region thickness and minority carrier lifetime in ZnSiP$_2$ layers on the efficiency of conversion of the incident solar light energy into electrical power was determined. It is shown that solar cells based on ZnSiP$_2$/Si heterostructures can provide efficiencies of 28.8% at AM1.5D, 100 mW/cm$^2$, and 33.3% at AM1.5D, 200 W/cm$^2$.
Received: 30.06.2015
Citation:
D. A. Kudriashov, A. S. Gudovskikh, A. M. Mozharov, A. D. Bolshakov, I. S. Mukhin, Zh. I. Alferov, “Simulation of characteristics of double-junction solar cells based on ZnSiP$_2$ heterostructures on silicon substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 41:23 (2015), 15–23; Tech. Phys. Lett., 41:12 (2015), 1120–1123
Linking options:
https://www.mathnet.ru/eng/pjtf7901 https://www.mathnet.ru/eng/pjtf/v41/i23/p15
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