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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 4, Pages 1–8 (Mi pjtf8076)  
This article is cited in 2 scientific papers (total in 2 papers)

Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

A. V. Emelyanovabcd, A. G. Kazanskiiabcd, P. K. Kashkarovabcd, O. I. Kon'kovabcd, N. P. Kutuzovabcd, V. L. Lyaskovskiiabcd, P. A. Forshabcd, M. V. Khenkinabcd

a Lomonosov Moscow State University
b National Research Centre "Kurchatov Institute", Moscow
c Ioffe Institute, St. Petersburg
d The All Russian Scientific-Research Institute for Optic Physical Metrology of Government Standard, Moscow
Full-text PDF (460 kB) Citations (2)
Abstract: We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm$^2$. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.
Received: 03.10.2013
English version:
Technical Physics Letters, 2014, Volume 40, Issue 2, Pages 141–144
DOI: https://doi.org/10.1134/S1063785014020217
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. V. Emelyanov, A. G. Kazanskii, P. K. Kashkarov, O. I. Kon'kov, N. P. Kutuzov, V. L. Lyaskovskii, P. A. Forsh, M. V. Khenkin, “Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:4 (2014), 1–8; Tech. Phys. Lett., 40:2 (2014), 141–144
Citation in format AMSBIB
\Bibitem{EmeKazKas14}
\by A.~V.~Emelyanov, A.~G.~Kazanskii, P.~K.~Kashkarov, O.~I.~Kon'kov, N.~P.~Kutuzov, V.~L.~Lyaskovskii, P.~A.~Forsh, M.~V.~Khenkin
\paper Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 40
\issue 4
\pages 1--8
\mathnet{http://mi.mathnet.ru/pjtf8076}
\elib{https://elibrary.ru/item.asp?id=21311087}
\transl
\jour Tech. Phys. Lett.
\yr 2014
\vol 40
\issue 2
\pages 141--144
\crossref{https://doi.org/10.1134/S1063785014020217}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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