Structural properties of the epitaxial (SiC)$_{1-x}$(AlN)$_x$ solid solution films fabricated by magnetron sputtering of SiC–Al composite targets

Epitaxial layers of the (SiC)$_{1-x}$(AlN)$_x$ solid solution with $x\approx$ 0.12 and $x$ = 0.64 without macroscopic structural distortions were grown using a new technique. It was established that the compositional dependences of crystal lattice parameters of the epitaxial films obey the Vegard’s law with an error of $\sim$ 0.03. This confirms that there is formation of isomorphic substitutional solid solutions in the SiC–AlN system.