Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

A new method of synthesis of semipolar gallium nitride on a silicon substrate using the technology of solid-phase epitaxy of 3C-SiC nanocrystals has been suggested. It has been demonstrated that application of buffer layers of 3C-SiC and AlN enables one to form epitaxial layers of semipolar gallium nitride with layer deviation from the polar position of the c axis of a wurtzite crystal by an angle of 48$^\circ$–51$^\circ$ at the minimal half-width of the X-ray diffraction rocking curve $(\omega_\theta)\sim$ 24'. The observed bend of a cylindrical character in the structure of GaN/AlN/3C-SiC(001) is explained by the anisotropic deformation of semipolar GaN on silicon.