Direct and indirect mechanisms of auger recombination in $n$-InGaN

The process of Auger recombination in $n$-type nitride compounds In$_x$Ga$_{1-x}$N at $T$ = 300 K has been numerically simulated. The recombination rate was calculated proceeding from the energy-band structure and wave functions determined using the empirical pseudopotential method. An indirect Auger process with the participation of phonons was analyzed using the second-order perturbation theory and the method of spectral-density functions. It is established that, for compounds emitting light in the visible spectral range, the Auger coefficient can vary from 3.1 $\times$ 10$^{-30}$ to 2.0 $\times$ 10$^{-32}$ cm$^6$/s and indirect recombination plays a secondary role.