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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 12, Pages 19–23
(Mi pjtf8179)
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This article is cited in 1 scientific paper (total in 1 paper)
A magnetic-field bending resonance sensor with maximum generated magnetoelectric voltage
G. S. Radchenkoabc, M. G. Radchenkoabc a Southern Federal University, Rostov-on-Don
b Research Institute of Physics, Southern Federal University
c Moscow State Technical University of Civil Aviation, Rostov Branch
Abstract:
A bending resonance magnetoelectric (ME) sensor with maximum generated response voltage is theoretically described. Based on the proposed model, the frequency dependence of the ME coefficient is determined. The optimum thickness of a piezoceramic layer is proposed, which provides a twofold increase in the response voltage. The phenomenon of antiresonance suppression of oscillations in the region of the third bending resonance at 95 Hz is discovered.
Received: 31.01.2014
Citation:
G. S. Radchenko, M. G. Radchenko, “A magnetic-field bending resonance sensor with maximum generated magnetoelectric voltage”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:12 (2014), 19–23; Tech. Phys. Lett., 40:6 (2014), 503–505
Linking options:
https://www.mathnet.ru/eng/pjtf8179 https://www.mathnet.ru/eng/pjtf/v40/i12/p19
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