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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 13, Pages 73–80 (Mi pjtf8199)  
This article is cited in 1 scientific paper (total in 1 paper)

Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

N. M. Shmidtabc, A. S. Usikovabc, E. I. Shabuninaabc, A. E. Chernyakovabc, A. V. Sakharovabc, S. Yu. Kurinabc, A. A. Antipovabc, I. S. Barashabc, A. D. Roenkovabc, Yu. N. Makarovabc, H. Helavaabc

a Ioffe Institute, St. Petersburg
b Nitride Crystals Group, St.-Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (202 kB) Citations (1)
Abstract: Final stage of the degradation of the external quantum efficiency of AlGaN/GaN UV light-emitting diodes (LEDs), grown by chloride-hydride vapor-phase epitaxy, and high-power InGaN/GaN blue LEDs, produced by metal-organic vapor-phase epitaxy, has been comparatively studied. It is shown that one of these processes leading to a decrease in the quantum efficiency for both types of LEDs is the local defect formation involving the Gold-Weisberg mechanism in a system of extended defects. To prolong the service life of AlGaN/GaN UV LEDs to more than 2000 h, it is necessary to improve the nanostructural arrangement of the material of light-emitting structures and determine the contribution from the AlGaN composition disorder to the degradation of the external quantum efficiency.
Received: 20.02.2014
English version:
Technical Physics Letters, 2014, Volume 40, Issue 7, Pages 574–577
DOI: https://doi.org/10.1134/S1063785014070104
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. M. Shmidt, A. S. Usikov, E. I. Shabunina, A. E. Chernyakov, A. V. Sakharov, S. Yu. Kurin, A. A. Antipov, I. S. Barash, A. D. Roenkov, Yu. N. Makarov, H. Helava, “Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:13 (2014), 73–80; Tech. Phys. Lett., 40:7 (2014), 574–577
Citation in format AMSBIB
\Bibitem{ShmUsiSha14}
\by N.~M.~Shmidt, A.~S.~Usikov, E.~I.~Shabunina, A.~E.~Chernyakov, A.~V.~Sakharov, S.~Yu.~Kurin, A.~A.~Antipov, I.~S.~Barash, A.~D.~Roenkov, Yu.~N.~Makarov, H.~Helava
\paper Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 40
\issue 13
\pages 73--80
\mathnet{http://mi.mathnet.ru/pjtf8199}
\elib{https://elibrary.ru/item.asp?id=22019593}
\transl
\jour Tech. Phys. Lett.
\yr 2014
\vol 40
\issue 7
\pages 574--577
\crossref{https://doi.org/10.1134/S1063785014070104}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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