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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 15, Pages 30–37
(Mi pjtf8218)
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This article is cited in 6 scientific papers (total in 6 papers)
Epitaxy of Pb(Zr,Ti)O$_3$ films on Ir/YSZ/Si under conditions of cathode sputtering: The effect of reactive gas composition
V. G. Beshenkov, A. A. Burlakov, A. G. Znamenskii, V. A. Marchenko Institute of Microelectronics Technology and High-Purity Materials RAS
Abstract:
The peculiarities of the growth of PZT films on heteroepitaxial Ir/YSZ/Si structures under conditions of cathode radio-frequency sputtering of a ceramic target in argon-oxygen mixtures have been studied. It is shown that sputtering in a gas mixture with a high partial pressure of oxygen results in crystallization of the PZT films in a metastable pyrochlore structure, while sputtering in argon or the use of argon in the initial phase of the sputtering yields PZT films with an equilibrium perovskite structure.
Received: 13.03.2014
Citation:
V. G. Beshenkov, A. A. Burlakov, A. G. Znamenskii, V. A. Marchenko, “Epitaxy of Pb(Zr,Ti)O$_3$ films on Ir/YSZ/Si under conditions of cathode sputtering: The effect of reactive gas composition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014), 30–37; Tech. Phys. Lett., 40:8 (2014), 644–647
Linking options:
https://www.mathnet.ru/eng/pjtf8218 https://www.mathnet.ru/eng/pjtf/v40/i15/p30
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