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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 15, Pages 45–49 (Mi pjtf8220)  
This article is cited in 1 scientific paper (total in 1 paper)

Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons

A. A. Lebedevab, V. V. Kozlovskyab

a Ioffe Institute, St. Petersburg
b Peter the Great St. Petersburg Polytechnic University
Full-text PDF (90 kB) Citations (1)
Abstract: Carrier removal rate $V_d$ has been determined in three sublimation-grown $p$-type SiC polytypes under irradiation with 0.9-MeV electrons. Known published data are used to compare the values of $V_d$ in silicon carbide at room temperature in relation to the polytype, conductivity type, and fabrication technology. A model that accounts for the difference between the values of $V_d$ is suggested.
Received: 17.02.2014
English version:
Technical Physics Letters, 2014, Volume 40, Issue 8, Pages 651–652
DOI: https://doi.org/10.1134/S1063785014080094
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Lebedev, V. V. Kozlovsky, “Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:15 (2014), 45–49; Tech. Phys. Lett., 40:8 (2014), 651–652
Citation in format AMSBIB
\Bibitem{LebKoz14}
\by A.~A.~Lebedev, V.~V.~Kozlovsky
\paper Irradiation of sublimation-grown $p$-SiC with 0.9-MeV electrons
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 40
\issue 15
\pages 45--49
\mathnet{http://mi.mathnet.ru/pjtf8220}
\elib{https://elibrary.ru/item.asp?id=22019614}
\transl
\jour Tech. Phys. Lett.
\yr 2014
\vol 40
\issue 8
\pages 651--652
\crossref{https://doi.org/10.1134/S1063785014080094}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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