Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted $p^+$–$n$ photodiode structure formation

The impurity-defect structure of heteroepitaxial Cd$_x$Hg$_{1-x}$Te/Si (0.35 $< x <$ 0.39) layers grown by molecular beam epitaxy for the creation of arsenic-ion-implanted $p^+$–$n$ junctions has been studied by the photoluminescence method. It is established that full realization of the possibilities of $p^+$–on–$n$ photodiode structures based on the CdHgTe/Si system is hindered by uncontrolled doping of the material that leads to the formation of both shallow (impurity level energy $\sim$10 meV) and deep ($\sim$ 50 meV) acceptor levels.