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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 20, Pages 96–103 (Mi pjtf8296)  
This article is cited in 3 scientific papers (total in 3 papers)

The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures

O. V. Vikhrova, M. V. Dorokhin, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, I. L. Kalentyeva

Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (159 kB) Citations (3)
Abstract: We have studied the emission characteristics and circularly polarized electroluminescence of light-emitting diodes based on heterostructures with a single (GaAs/GaAsSb/GaAs) or two-layer (GaAs/InGaAs/GaAsSb/GaAs) quantum well (QW) and a Mn-delta-doped layer in the GaAs barrier. The ferromagnetic effect of the delta-layer of Mn on the spin polarization of carriers in QWs based on type-II heterostructures has been observed and studied for the first time. The observed phenomena are described using a model of the exchange interaction of Mn ions in the barrier and holes in the QW.
Received: 22.05.2014
English version:
Technical Physics Letters, 2014, Volume 40, Issue 10, Pages 930–933
DOI: https://doi.org/10.1134/S1063785014100290
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. V. Vikhrova, M. V. Dorokhin, P. B. Demina, B. N. Zvonkov, A. V. Zdoroveyshchev, Yu. A. Danilov, I. L. Kalentyeva, “The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:20 (2014), 96–103; Tech. Phys. Lett., 40:10 (2014), 930–933
Citation in format AMSBIB
\Bibitem{VikDorDem14}
\by O.~V.~Vikhrova, M.~V.~Dorokhin, P.~B.~Demina, B.~N.~Zvonkov, A.~V.~Zdoroveyshchev, Yu.~A.~Danilov, I.~L.~Kalentyeva
\paper The effect of ferromagnetic Mn-delta-doped layer on the emission properties of GaAsSb/GaAs and InGaAs/GaAsSb/GaAs heterostructures
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2014
\vol 40
\issue 20
\pages 96--103
\mathnet{http://mi.mathnet.ru/pjtf8296}
\elib{https://elibrary.ru/item.asp?id=22019692}
\transl
\jour Tech. Phys. Lett.
\yr 2014
\vol 40
\issue 10
\pages 930--933
\crossref{https://doi.org/10.1134/S1063785014100290}
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  • https://www.mathnet.ru/eng/pjtf/v40/i20/p96
    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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