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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2014, Volume 40, Issue 22, Pages 30–36
(Mi pjtf8316)
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This article is cited in 3 scientific papers (total in 3 papers)
The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon
S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova Vinogradov Institute of Geochemistry and Analytical Chemistry, Siberian Branch, Russian Academy of Sciences
Abstract:
The properties of special grain boundaries in multicrystalline silicon (mc-Si) grown from metallurgical refined silicon by the Bridgman–Stockbarger method have been studied. The electric activity of grain boundaries was characterized by measuring the electron-beam-induced current. Structural features of the mc-Si samples were studied by scanning electron microscopy, electron-probe microanalysis, and atomic force microscopy techniques.
Received: 15.07.2014
Citation:
S. M. Peshcherova, A. I. Nepomnyashchikh, L. A. Pavlova, “The electric activity of special grain boundaries in multicrystalline silicon grown from metallurgical refined silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 40:22 (2014), 30–36; Tech. Phys. Lett., 40:11 (2014), 1000–1002
Linking options:
https://www.mathnet.ru/eng/pjtf8316 https://www.mathnet.ru/eng/pjtf/v40/i22/p30
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