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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 2, Pages 1–6 (Mi pjtf8382)  
This article is cited in 8 scientific papers (total in 8 papers)

Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers

N. I. Anisimova, V. A. Bordovskii, G. I. Grabko, R. A. Castro

Herzen State Pedagogical University of Russia, St. Petersburg
Full-text PDF (134 kB) Citations (8)
Abstract: The photodielectric effect (PDE) in amorphous arsenic triselenide (As$_2$Se$_3$) layers has been studied in a weakly varying electric field. As the field frequency decreases in the infra-low-frequency range, the experimentally measured function of relative conductivity coincides with the theoretically predicted behavior. It is established that the frequency dependence of the recombination coefficient exhibits a minimum.
Received: 08.06.2012
English version:
Technical Physics Letters, 2013, Volume 39, Issue 1, Pages 98–100
DOI: https://doi.org/10.1134/S1063785013010318
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. I. Anisimova, V. A. Bordovskii, G. I. Grabko, R. A. Castro, “Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:2 (2013), 1–6; Tech. Phys. Lett., 39:1 (2013), 98–100
Citation in format AMSBIB
\Bibitem{AniBorGra13}
\by N.~I.~Anisimova, V.~A.~Bordovskii, G.~I.~Grabko, R.~A.~Castro
\paper Specific features of the photodielectric effect in amorphous $\alpha$-As$_2$Se$_3$ layers
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 39
\issue 2
\pages 1--6
\mathnet{http://mi.mathnet.ru/pjtf8382}
\elib{https://elibrary.ru/item.asp?id=20328080}
\transl
\jour Tech. Phys. Lett.
\yr 2013
\vol 39
\issue 1
\pages 98--100
\crossref{https://doi.org/10.1134/S1063785013010318}
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    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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