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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 3, Pages 41–48 (Mi pjtf8400)  
This article is cited in 8 scientific papers (total in 8 papers)

RF linewidth in passively mode locked quantum well lasers

M. S. Buyalo, I. M. Gadzhiev, I. O. Bakshaev, E. L. Portnoi

Ioffe Institute, St. Petersburg
Full-text PDF (165 kB) Citations (8)
Abstract: Investigation of the stability of pulse repetition rate emitted with semiconductor lasers in the regime of passive mode locking has been conducted. It was shown experimentally that the decrease of an overlap integral of the quantum-sized active layer with the waveguide mode and the increase of the time of the carrier capture on the emitting level resulted in narrowing of the radio-frequency linewidth.
Received: 13.09.2012
English version:
Technical Physics Letters, 2013, Volume 39, Issue 2, Pages 161–163
DOI: https://doi.org/10.1134/S1063785013020053
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. S. Buyalo, I. M. Gadzhiev, I. O. Bakshaev, E. L. Portnoi, “RF linewidth in passively mode locked quantum well lasers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:3 (2013), 41–48; Tech. Phys. Lett., 39:2 (2013), 161–163
Citation in format AMSBIB
\Bibitem{BuyGadBak13}
\by M.~S.~Buyalo, I.~M.~Gadzhiev, I.~O.~Bakshaev, E.~L.~Portnoi
\paper RF linewidth in passively mode locked quantum well lasers
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 39
\issue 3
\pages 41--48
\mathnet{http://mi.mathnet.ru/pjtf8400}
\elib{https://elibrary.ru/item.asp?id=20328098}
\transl
\jour Tech. Phys. Lett.
\yr 2013
\vol 39
\issue 2
\pages 161--163
\crossref{https://doi.org/10.1134/S1063785013020053}
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    • This publication is cited in the following 8 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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