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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 3, Pages 63–71
(Mi pjtf8403)
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This article is cited in 6 scientific papers (total in 6 papers)
On the role of lattice defects in the formation of adsorption properties of graphene
Z. Z. Alisultanovab, R. P. Meylanovab, A. K. Nukhovab a Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
b Daghestan State University, Makhachkala
Abstract:
Adsorption on disordered graphene is considered within the Anderson model. Analytical expressions for the density of states of isolated disordered graphene and an atom adsorbed on it have been obtained. The influence of vacancy-type defects on the adsorption adatom characteristics is demonstrated. The charge transfer for transition-metal atoms has been estimated.
Received: 19.09.2012
Citation:
Z. Z. Alisultanov, R. P. Meylanov, A. K. Nukhov, “On the role of lattice defects in the formation of adsorption properties of graphene”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:3 (2013), 63–71; Tech. Phys. Lett., 39:2 (2013), 171–174
Linking options:
https://www.mathnet.ru/eng/pjtf8403 https://www.mathnet.ru/eng/pjtf/v39/i3/p63
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