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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 4, Pages 46–52
(Mi pjtf8427)
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This article is cited in 4 scientific papers (total in 4 papers)
Solid-state field-emission diode
V. A. Bespalov, E. A. Il'ichev, A. E. Kuleshov, D. M. Migunov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, Yu. V. Shcherbakhin National Research University of Electronic Technology
Abstract:
We present the results of experimental investigations of the characteristics of solid-state field-emission diodes, which were created for the first time using silicon/diamond heterostructures with nanostructured heteroboundaries.
Received: 04.10.2012
Citation:
V. A. Bespalov, E. A. Il'ichev, A. E. Kuleshov, D. M. Migunov, R. M. Nabiev, G. N. Petrukhin, G. S. Rychkov, Yu. V. Shcherbakhin, “Solid-state field-emission diode”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013), 46–52; Tech. Phys. Lett., 39:2 (2013), 206–208
Linking options:
https://www.mathnet.ru/eng/pjtf8427 https://www.mathnet.ru/eng/pjtf/v39/i4/p46
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