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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 4, Pages 87–94
(Mi pjtf8433)
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This article is cited in 1 scientific paper (total in 1 paper)
Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra
V. V. Svetukhinab, A. S. Kadochkinab, V. D. Risovanyab a Ulyanovsk State University
b Scientific-Research Institute of Atomic Reactors, Dimitrovgrad
Abstract:
A model of helium thermodesorption from irradiated silicon carbide is proposed. The yield of helium from this material in the course of thermal annealing is quantitatively estimated. The energy parameters of the defect structure of silicon carbide are determined.
Received: 18.07.2012
Citation:
V. V. Svetukhin, A. S. Kadochkin, V. D. Risovany, “Determining the parameters of helium accumulation centers in irradiated silicon carbide from thermodesorption spectra”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:4 (2013), 87–94; Tech. Phys. Lett., 39:2 (2013), 226–228
Linking options:
https://www.mathnet.ru/eng/pjtf8433 https://www.mathnet.ru/eng/pjtf/v39/i4/p87
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