Binding energy of the exciton of a spatially separated electron and hole in quasi-zero-dimensional semiconductor nanosystems

A quasi-zero-dimensional semiconductor nanosystem involving a hole moving in the volume of a semiconductor quantum dot (QD) and an electron localized on the outer spherical interface between the QD and a dielectric matrix has been studied. It is established that the ground-state binding energy of the exciton formed by these spatially separated electron and hole is significantly increased compared to the exciton binding energy in single crystals of cadmium sulfide and zinc selenide.