|
|
Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 9, Pages 47–55
(Mi pjtf8489)
|
|
|
|
This article is cited in 3 scientific papers (total in 3 papers)
Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate
P. A. Alekseevab, M. S. Dunaevskiiab, E. V. Gushchinaab, E. Durgun Ozbenc, E. Lahderantad, A. N. Titkovab a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c Peter Grunberg Insitute 9 (PGI-9-IT) and JARA-FIT, Research Center Julich,
D-52425 Julich,German
d Lappeenranta University of Technology, Lappeenranta FI-53851, Finland
Abstract:
A charge leakage in LaScO$_3$ nanolayers on a Si substrate has been investigated by Kelvin probe microscopy. A charge leakage from the LaScO$_3$ layer to the LaScO$_3$/Si interface layer with a subsequent lateral charge spreading in the interface layer and simultaneous leakage to the Si substrate has been revealed in this system. A lateral charge spreading has not been directly observed in the LaScO$_3$ layer.
Received: 09.01.2013
Citation:
P. A. Alekseev, M. S. Dunaevskii, E. V. Gushchina, E. Durgun Ozben, E. Lahderanta, A. N. Titkov, “Behavior of locally injected charges in high-k nanolayers of LaScO$_3$ insulator on a Si substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:9 (2013), 47–55; Tech. Phys. Lett., 39:5 (2013), 427–430
Linking options:
https://www.mathnet.ru/eng/pjtf8489 https://www.mathnet.ru/eng/pjtf/v39/i9/p47
|
|