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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 10, Pages 49–53 (Mi pjtf8502)  
This article is cited in 3 scientific papers (total in 3 papers)

Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii, V. P. Khvostikov, E. P. Marukhina

Ioffe Institute, St. Petersburg
Full-text PDF (112 kB) Citations (3)
Abstract: A new method based on solid-state substitution reactions is proposed for obtaining nanodimensional layers of GaAsP solid solutions on the surface of GaAs semiconductor crystals. The processed GaAs wafers exhibit a wide-bandgap optical window effect, whereby their room-temperature photoluminescence intensity increases by a factor of up to 25.
Received: 24.01.2013
English version:
Technical Physics Letters, 2013, Volume 39, Issue 5, Pages 472–474
DOI: https://doi.org/10.1134/S106378501305026X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. I. Vasil'ev, G. S. Gagis, V. I. Kuchinskii, V. P. Khvostikov, E. P. Marukhina, “Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:10 (2013), 49–53; Tech. Phys. Lett., 39:5 (2013), 472–474
Citation in format AMSBIB
\Bibitem{VasGagKuc13}
\by V.~I.~Vasil'ev, G.~S.~Gagis, V.~I.~Kuchinskii, V.~P.~Khvostikov, E.~P.~Marukhina
\paper Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 39
\issue 10
\pages 49--53
\mathnet{http://mi.mathnet.ru/pjtf8502}
\elib{https://elibrary.ru/item.asp?id=20328186}
\transl
\jour Tech. Phys. Lett.
\yr 2013
\vol 39
\issue 5
\pages 472--474
\crossref{https://doi.org/10.1134/S106378501305026X}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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