Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

The first results of studying the electrical properties of thin silicon carbide (SiC) layers grown on silicon using a new method of solid-phase epitaxy are presented. The type of carriers in these SiC/Si films is determined, and their concentration and mobility are measured. SiC films grown by the proposed method on Si substrates possess n-type conductivity. The concentration of majority carriers (electrons) in undoped SiC layers amounts on average to $n\sim$ 10$^{18}$ cm$^{-3}$, and their mobility varies within $\mu$ = 27–85 cm$^2$/(V s), depending on the regime of synthesis.