A microchannel avalanche photodiode with a fast recovery time of parameters

The design and operation principle of a novel microchannel avalanche photodiode with the short recovery time of parameters are considered in this Letter. A distinctive feature of the new device is that at the operating potential on it, the $n^+$ regions (pixels) deeply submerged into the epitaxial layer with $p$-type conductivity are completely depleted; thus, the possibility of accumulation of multiplied charge carriers in them is carried out. This enables attaining the recovery time of pixels in the device of $\sim$50 ns at photocurrent amplification factor equal to 250.