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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 14, Pages 34–42 (Mi pjtf8548)  
This article is cited in 1 scientific paper (total in 1 paper)

Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example

D. I. Smirnovabcd, R. M. Giniyatyllinabcd, I. Yu. Zyul’kovabcd, N. A. Medetovabcd, N. N. Gerasimenkoabcd

a National Research University of Electronic Technology
b P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
c Molecular Electronics Research Institute and Mikron Plant, Zelenograd, Moscow, Russia
d Moscow Institute of Physics and Technology (State University), Dolgoprudny, Moscow region
Full-text PDF (350 kB) Citations (1)
Abstract: Results of a comprehensive analysis of process variables of TiN/Ti diffuse barrier structures used in modern microelectronics are presented. To provide reliable spectral ellipsometry results, which is a common technique for postprocess control of these structures during the testing stage of the manufacturing process, a comprehensive approach is suggested that consists in consistent processing of transmission electron microscopy and X-ray reflectometry data. The resulting data were used to calculate the variances of optical coefficients of spectral ellipsometry, which depend on features of the manufacturing process and are required for analysis of the parameters of manufactured diffuse barrier structures.
Received: 11.03.2013
English version:
Technical Physics Letters, 2013, Volume 39, Issue 7, Pages 640–643
DOI: https://doi.org/10.1134/S1063785013070249
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. I. Smirnov, R. M. Giniyatyllin, I. Yu. Zyul’kov, N. A. Medetov, N. N. Gerasimenko, “Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:14 (2013), 34–42; Tech. Phys. Lett., 39:7 (2013), 640–643
Citation in format AMSBIB
\Bibitem{SmiGinZyu13}
\by D.~I.~Smirnov, R.~M.~Giniyatyllin, I.~Yu.~Zyul’kov, N.~A.~Medetov, N.~N.~Gerasimenko
\paper Problems in measurements of parameters of elements and structures in modern micro- and nanoelectronics considering TiN/Ti diffusion barrier structures as an example
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2013
\vol 39
\issue 14
\pages 34--42
\mathnet{http://mi.mathnet.ru/pjtf8548}
\elib{https://elibrary.ru/item.asp?id=20328247}
\transl
\jour Tech. Phys. Lett.
\yr 2013
\vol 39
\issue 7
\pages 640--643
\crossref{https://doi.org/10.1134/S1063785013070249}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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