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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2013, Volume 39, Issue 18, Pages 45–52
(Mi pjtf8597)
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This article is cited in 4 scientific papers (total in 4 papers)
Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure
N. D. Il'inskayaabc, S. A. Karandashovabc, N. M. Latnikovaabc, A. A. Lavrovabc, B. A. Matveevabc, M. A. Remennyiabc, E. N. Sevostyanovabc, N. M. Stusabc a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c JSC National Research Institute "Electron", St. Petersburg
Abstract:
Analysis of current-voltage and spectral characteristics of photodiodes based on a single $p$-InAsSbP/$n$-InAs heterostructure formed on a heavily doped $n^+$-InAs substrate ($n^+\sim$ 10$^{18}$ cm$^{-3}$) is presented. It is shown that, at low temperatures (77 $< T <$ 190 K), the generation-recombination current flow mechanism typical of $p$–$i$–$n$ diodes dominates. Expected parameters of the photodiode that can be obtained using these heterostructures are presented.
Received: 27.05.2013
Citation:
N. D. Il'inskaya, S. A. Karandashov, N. M. Latnikova, A. A. Lavrov, B. A. Matveev, M. A. Remennyi, E. N. Sevostyanov, N. M. Stus, “Cooled photodiodes based on a type-II single $p$-InAsSbP/$n$-InAs heterostructure”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 39:18 (2013), 45–52; Tech. Phys. Lett., 39:9 (2013), 818–821
Linking options:
https://www.mathnet.ru/eng/pjtf8597 https://www.mathnet.ru/eng/pjtf/v39/i18/p45
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