A high-temperature hydrogen detector with Pt/Pt+/$n$-6H–SiC structure

A combined method of implantation of Pt+ and subsequent deposition of a Pt film from pulsed-laser plasma was used to form gas-sensitive structures on $n$-6H–SiC monocrystals. High-temperature implantation ensures formation of a layer that improves adhesion of the film to the substrate and varies the current flow parameters due to the effect of atomic hydrogen, which appears during the reaction between H$_2$ and catalytically active Pt. Breakage of the Pt film at elevated detector-operating temperatures ($\sim$500$^\circ$C) has no pronounced negative effect on the sensor properties of the Pt/Pt+/SiC structure. Similar effects in the traditionally used Pt/SiC diode structure lead to severe degradation of its characteristics.