Photoinduced degradation of $\alpha$-Si : H/$\mu$c-Si : H

Photoinduced degradation of tandem photoconverters with the structure $\alpha$-Si:H/$\mu$c-Si:H and initial efficiency of 10.5% at temperatures of 298, 328, and 353 K is experimentally studied. It has been found that, at a temperature of 298 K, the efficiency of the photoconverters decreases by 1.0–1.2% during long light exposure, while an increase in temperature to 328 K leads to a decrease in efficiency to 0.2%; at a temperature of 353 K, no degradation is observed. To explain these results, a modified H-collision model was used. Thermal-activation energy has been determined for the process that hampers the growth of dangling (ruptured) bonds in the $i$-$\alpha$-Si:H layer.