Features of Fermi-level pinning at the interface of Al$_{0.3}$Ga$_{0.7}$As with anodic oxide and stabilized zirconia

In the metal–oxide–semiconductor structures based on the Al$_{0.3}$Ga$_{0.7}$As films prepared by metal-organic epitaxy, Fermi-level pinning at the Al$_{0.3}$Ga$_{0.7}$As/oxide interface at a distance of 1.1 eV from the top of the Al$_{0.3}$Ga$_{0.7}$As conduction band was observed. In these structures, a long-term memory phenomenon was found that was caused by the inflow of electrons from Al$_{0.3}$Ga$_{0.7}$As to the anodic oxide and their capture by deep traps. The reversible change in the states of the structures due to this memory effect under the action of an electric field or light was observed.