Photoelectric properties of solar cells based on GaPNAs/GaP heterostructures

It is shown that photovoltaic converters (PVCs) can be based on GaPNAs/GaP heterostructures, which are of considerable interest for the creation of multijunction solar cells on silicon substrates. It is established that $p$–$i$–$n$ structures with undoped GaPNAs layer provide for a more effective separation of charge carriers, which makes it possible to obtain a greater short-circuit current than that in $p$–$n$ structures with an $n$-type base. A specific feature in spectral characteristics of the proposed PVCs is the presence of two peaks in the spectra of quantum efficiency, which is related to a complicated band structure of GaPNAs.