Pisma v Zhurnal Tekhnicheskoi Fiziki
RUS  ENG    JOURNALS   PEOPLE   ORGANISATIONS   CONFERENCES   SEMINARS   VIDEO LIBRARY   PACKAGE AMSBIB  
General information
Latest issue
Archive
Guidelines for authors

Search papers
Search references

RSS
Latest issue
Current issues
Archive issues
What is RSS


Pisma v Zhurnal Tekhnicheskoi Fiziki:
Year:
Volume:
Issue:
Page:
Find




Personal entry:
Login:
Password:
Save password
Enter
Forgotten password?
Register

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 1, Pages 27–36 (Mi pjtf8729)  
This article is cited in 2 scientific papers (total in 2 papers)

Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin

O. E. Tereshchenkoa, A. G. Paulisha, M. A. Neklyudovaa, T. S. Shamirzaeva, A. S. Yaroshevicha, I. P. Prosvirinb, I. E. Zhaksylykovaa, D. V. Dmitrieva, A. I. Toropova, S. N. Varnakovc, M. V. Rautskiic, N. V. Volkovcd, S. G. Ovchinnikovc, A. V. Latyshevae

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Boreskov Institute of Catalysis SB RAS, Novosibirsk
c L. V. Kirensky Institute of Physics, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk
d M. F. Reshetnev Siberian State Aerospace University,
e Novosibirsk State University
Full-text PDF (517 kB) Citations (2)
Abstract: Conditions necessary for the formation of a Fe/GaAs interface have been established and the electrical, magnetic, and optical properties of Pd/Fe/GaAs heterostructures with InGaAs quantum wells have been studied. The possibility of obtaining an epitaxial layer of Fe on GaAs(001) surface at room temperature is demonstrated. The magnetization curve of Fe layer exhibits hysteresis with an easy axis in plane of the sample. Iron exhibits surface segregation by diffusion through a 4-nm-thick Pd layer. The properties of obtained Pd/Fe/GaAs/InGaAs structures show evidence for their possible use in optical detectors of free-electron spin.
Received: 26.07.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 1, Pages 12–16
DOI: https://doi.org/10.1134/S1063785012010154
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: O. E. Tereshchenko, A. G. Paulish, M. A. Neklyudova, T. S. Shamirzaev, A. S. Yaroshevich, I. P. Prosvirin, I. E. Zhaksylykova, D. V. Dmitriev, A. I. Toropov, S. N. Varnakov, M. V. Rautskii, N. V. Volkov, S. G. Ovchinnikov, A. V. Latyshev, “Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:1 (2012), 27–36; Tech. Phys. Lett., 38:1 (2012), 12–16
Citation in format AMSBIB
\Bibitem{TerPauNek12}
\by O.~E.~Tereshchenko, A.~G.~Paulish, M.~A.~Neklyudova, T.~S.~Shamirzaev, A.~S.~Yaroshevich, I.~P.~Prosvirin, I.~E.~Zhaksylykova, D.~V.~Dmitriev, A.~I.~Toropov, S.~N.~Varnakov, M.~V.~Rautskii, N.~V.~Volkov, S.~G.~Ovchinnikov, A.~V.~Latyshev
\paper Forming interface in Pd/Fe/GaAs/InGaAs structure for optical detector of free-electron spin
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 1
\pages 27--36
\mathnet{http://mi.mathnet.ru/pjtf8729}
\elib{https://elibrary.ru/item.asp?id=20327753}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 1
\pages 12--16
\crossref{https://doi.org/10.1134/S1063785012010154}
Linking options:
  • https://www.mathnet.ru/eng/pjtf8729
  • https://www.mathnet.ru/eng/pjtf/v38/i1/p27
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
     
      Contact us:
    		  Terms of Use  Registration to the website  Logotypes © Steklov Mathematical Institute RAS, 2025