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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 6, Pages 15–21 (Mi pjtf8798)  
This article is cited in 2 scientific papers (total in 2 papers)

Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors

P. I. Khadzhia, I. V. Belousova, A. V. Corovaib, D. A. Markovb

a Institute of Applied Physics Academy of Sciences of Moldova, Kishinev
b Taras Shevchenko Transnistria State University, Tiraspol
Full-text PDF (595 kB) Citations (2)
Abstract: A new mechanism of the generation (amplification) of terahertz radiation in semiconductors is proposed, which is based on the quantum transitions between two-exciton and biexciton under conditions of single-photon excitation from the ground state of a crystal.
Received: 01.11.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 3, Pages 261–264
DOI: https://doi.org/10.1134/S1063785012030236
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. I. Khadzhi, I. V. Belousov, A. V. Corovai, D. A. Markov, “Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012), 15–21; Tech. Phys. Lett., 38:3 (2012), 261–264
Citation in format AMSBIB
\Bibitem{KhaBelCor12}
\by P.~I.~Khadzhi, I.~V.~Belousov, A.~V.~Corovai, D.~A.~Markov
\paper Generation (amplification) of terahertz radiation during resonant exciton formation in semiconductors
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 6
\pages 15--21
\mathnet{http://mi.mathnet.ru/pjtf8798}
\elib{https://elibrary.ru/item.asp?id=20327823}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 3
\pages 261--264
\crossref{https://doi.org/10.1134/S1063785012030236}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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