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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 6, Pages 90–95 (Mi pjtf8808)  
This article is cited in 14 scientific papers (total in 14 papers)

Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide

S. A. Kukushkinab, A. V. Osipovab, S. G. Zhukovab, E. E. Zavarinab, V. V. Lundinab, M. A. Sinicinab, M. M. Rozhavskayaab, A. F. Tsatsul'nikovab, S. I. Troshkovab, N. A. Feoktistovab

a Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
b Ioffe Institute, St. Petersburg
Full-text PDF (610 kB) Citations (14)
Abstract: A light-emitting diode (LED) structure based on group III nitride has been grown for the first time on Si(111) substrate with SiC buffer nanolayer (50- to 200-nm-thick) obtained by solid-phase epitaxy. This LED structure is characterized by record low ($<$ 10$^8$ cm$^{-2}$) density of lattice misfit dislocations at a total dislocation density of $\sim$8 $\times$ 10$^8$ cm$^{-2}$. The photo- and electroluminescence spectra of obtained structures have been measured.
Received: 15.11.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 3, Pages 297–299
DOI: https://doi.org/10.1134/S1063785012030261
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. A. Kukushkin, A. V. Osipov, S. G. Zhukov, E. E. Zavarin, V. V. Lundin, M. A. Sinicin, M. M. Rozhavskaya, A. F. Tsatsul'nikov, S. I. Troshkov, N. A. Feoktistov, “Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:6 (2012), 90–95; Tech. Phys. Lett., 38:3 (2012), 297–299
Citation in format AMSBIB
\Bibitem{KukOsiZhu12}
\by S.~A.~Kukushkin, A.~V.~Osipov, S.~G.~Zhukov, E.~E.~Zavarin, V.~V.~Lundin, M.~A.~Sinicin, M.~M.~Rozhavskaya, A.~F.~Tsatsul'nikov, S.~I.~Troshkov, N.~A.~Feoktistov
\paper Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 6
\pages 90--95
\mathnet{http://mi.mathnet.ru/pjtf8808}
\elib{https://elibrary.ru/item.asp?id=20327833}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 3
\pages 297--299
\crossref{https://doi.org/10.1134/S1063785012030261}
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    • This publication is cited in the following 14 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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