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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 8, Pages 10–16 (Mi pjtf8824)  
This article is cited in 1 scientific paper (total in 1 paper)

Calculating GaAs semiconductor nanoneedle size distribution

A. D. Bolshakova, V. G. Dubrovskiib

a St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
b Ioffe Institute, St. Petersburg
Full-text PDF (188 kB) Citations (1) English version article
Abstract: The temporal evolution of an ensemble of semiconductor (GaAs) nanoneedles (NNs) growing on a lattice-mismatched substrate (silicon, sapphire) has been theoretically analyzed assuming the validity of the Gaussian law of nucleation and constancy of the NN shape during growth. The NN size distribution function is determined for various moments of time. The results of analysis can be used for optimization of growth methods aimed at obtaining NN ensembles with preset morphology.
Received: 04.12.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 4, Pages 358–360
DOI: https://doi.org/10.1134/S1063785012040190
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. D. Bolshakov, V. G. Dubrovskii, “Calculating GaAs semiconductor nanoneedle size distribution”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:8 (2012), 10–16; Tech. Phys. Lett., 38:4 (2012), 358–360
Citation in format AMSBIB
\Bibitem{BolDub12}
\by A.~D.~Bolshakov, V.~G.~Dubrovskii
\paper Calculating GaAs semiconductor nanoneedle size distribution
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 8
\pages 10--16
\mathnet{http://mi.mathnet.ru/pjtf8824}
\elib{https://elibrary.ru/item.asp?id=20327849}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 4
\pages 358--360
\crossref{https://doi.org/10.1134/S1063785012040190}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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