Transient characteristics of reversely switched dynistors in the submicrosecond pulse range

Transient injection processes in reversely switched dynistors (RSDs) operating in a submicrosecond pulse range have been numerically simulated and the output current and voltage characteristics have been calculated. It is shown that, provided a proper choice of parameters of the silicon device structure and external chains, RSDs can be used to switch current pulses with amplitudes up to several dozen kA/cm$^2$, total durations of several hundred nanoseconds, and leading edge widths within 50–100 ns. The voltage decreases from the initial level by an order of magnitude already in 15–20 ns, and attains a steady value of 10–25 V during the leading edge time.