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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9, Pages 15–22 (Mi pjtf8837)  
This article is cited in 3 scientific papers (total in 3 papers)

Charge carrier lifetime recovery in $\gamma$-irradiated silicon under the action of ultrasound

A. A. Podolyan, A. B. Nadtochii, O. A. Korotchenkov

National Taras Shevchenko University of Kyiv
Full-text PDF (217 kB) Citations (3)
Abstract: Ultrasonic treatment of $\gamma$-irradiated silicon can lead to a significant (up to about 70%) recovery of the minority carrier lifetime reduced by the irradiation. A mechanism of the ultrasound-induced recovery is proposed, which is based on the release of vacancies from $E$-type centers followed by their trapping on defect sinks. It is suggested that the role of defect sinks can be played by $A$-type microdefects.
Received: 31.10.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 5, Pages 405–408
DOI: https://doi.org/10.1134/S1063785012050124
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: A. A. Podolyan, A. B. Nadtochii, O. A. Korotchenkov, “Charge carrier lifetime recovery in $\gamma$-irradiated silicon under the action of ultrasound”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 15–22; Tech. Phys. Lett., 38:5 (2012), 405–408
Citation in format AMSBIB
\Bibitem{PodNadKor12}
\by A.~A.~Podolyan, A.~B.~Nadtochii, O.~A.~Korotchenkov
\paper Charge carrier lifetime recovery in $\gamma$-irradiated silicon under the action of ultrasound
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 9
\pages 15--22
\mathnet{http://mi.mathnet.ru/pjtf8837}
\elib{https://elibrary.ru/item.asp?id=20327862}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 5
\pages 405--408
\crossref{https://doi.org/10.1134/S1063785012050124}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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