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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9, Pages 31–36 (Mi pjtf8839)  
This article is cited in 1 scientific paper (total in 1 paper)

Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates

M. G. Mynbaevaab, A. E. Nikolaevab, A. A. Sitnikovaab, R. V. Zolotarevaab, K. J. Mynbaevab

a Ioffe Institute, St. Petersburg
b Perfect Crystals LLC, Saint-Petersburg
Full-text PDF (1603 kB) Citations (1)
Abstract: Results of experiments on the homoepitaxial growth of gallium nitride (GaN) on porous GaN substrates with nanostructured volume are reported. A mechanism that can be used to exclude the dislocations of substrate from the sources of threading dislocations in homoepitaxial layers is described for the first time.
Received: 26.12.2011
English version:
Technical Physics Letters, 2012, Volume 38, Issue 5, Pages 412–414
DOI: https://doi.org/10.1134/S1063785012050082
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. G. Mynbaeva, A. E. Nikolaev, A. A. Sitnikova, R. V. Zolotareva, K. J. Mynbaev, “Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 31–36; Tech. Phys. Lett., 38:5 (2012), 412–414
Citation in format AMSBIB
\Bibitem{MynNikSit12}
\by M.~G.~Mynbaeva, A.~E.~Nikolaev, A.~A.~Sitnikova, R.~V.~Zolotareva, K.~J.~Mynbaev
\paper Collective effects in the system of structural defects in homoepitaxial GaN grown on porous substrates
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 9
\pages 31--36
\mathnet{http://mi.mathnet.ru/pjtf8839}
\elib{https://elibrary.ru/item.asp?id=20327864}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 5
\pages 412--414
\crossref{https://doi.org/10.1134/S1063785012050082}
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    • This publication is cited in the following 1 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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