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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 9, Pages 81–87
(Mi pjtf8846)
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This article is cited in 3 scientific papers (total in 3 papers)
AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 $\mu$m) IR photodetectors
O. F. Butyaginab, N. I. Katsavetsab, I. V. Koganab, D. M. Krasovitskyab, V. B. Kulikovab, V. P. Chalyiab, A. L. Dudinab, O. B. Cherednichenkoab a Polyus Research and Development Institute named after M. F. Stel'makh, Moscow
b ZAO Svetlana-Rost, St. Petersburg
Abstract:
We have studied AlGaAs/GaAs multiquantum-well heterostructures grown by molecular beam epitaxy in an STE-3532 setup (SemiTEq, St. Petersburg), which are intended for long-wavelength IR photodetectors operating on inter-subband transitions. Quantum wells (QWs) in the obtained heterostructures are highly homogeneous and possess sharp heteroboundaries, which is confirmed by the photoluminescence spectra and dark current-voltage characteristics of photodetectors based on these heterostructures. The photodetectors exhibit sensitivity in the atmospheric transparency window (8–10 mm) and possess parameters that make possible their use in large-format photodetector arrays for a new generation of long-wavelength IR camera systems.
Received: 12.09.2011
Citation:
O. F. Butyagin, N. I. Katsavets, I. V. Kogan, D. M. Krasovitsky, V. B. Kulikov, V. P. Chalyi, A. L. Dudin, O. B. Cherednichenko, “AlGaAs/GaAs multiquantum-well heterostructures for long-wavelength (8–10 $\mu$m) IR photodetectors”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:9 (2012), 81–87; Tech. Phys. Lett., 38:5 (2012), 436–438
Linking options:
https://www.mathnet.ru/eng/pjtf8846 https://www.mathnet.ru/eng/pjtf/v38/i9/p81
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