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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 11, Pages 78–87 (Mi pjtf8874)  
This article is cited in 18 scientific papers (total in 18 papers)

Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes

P. B. Rodinab, A. N. Minarskyab, I. V. Grekhovab

a Ioffe Institute, St. Petersburg
b St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
Full-text PDF (343 kB) Citations (18)
Abstract: The process of spatially nonuniform switching in high-voltage silicon diodes operating in the delayed avalanche regime has been numerically simulated. The dependence of the transient process on the ratio between the total diode cross-section area and the area of the region where the switching takes place has been studied. The switching time (60–70 ps) and qualitative form of the transient characteristic agree with the available experimental data. It is established that a rapid drop of the diode voltage begins after the ionization front has traveled over most of the base and then continues due to secondary avalanche breakdown of the base filled with free carriers. Thus the time of switching to the conducting state exhibits no direct correlation with the velocity of ionization front propagation.
English version:
Technical Physics Letters, 2012, Volume 38, Issue 6, Pages 535–539
DOI: https://doi.org/10.1134/S1063785012060144
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. B. Rodin, A. N. Minarsky, I. V. Grekhov, “Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:11 (2012), 78–87; Tech. Phys. Lett., 38:6 (2012), 535–539
Citation in format AMSBIB
\Bibitem{RodMinGre12}
\by P.~B.~Rodin, A.~N.~Minarsky, I.~V.~Grekhov
\paper Numerical simulation of spatially nonuniform switching in silicon avalanche sharpening diodes
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 11
\pages 78--87
\mathnet{http://mi.mathnet.ru/pjtf8874}
\elib{https://elibrary.ru/item.asp?id=20327899}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 6
\pages 535--539
\crossref{https://doi.org/10.1134/S1063785012060144}
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    • This publication is cited in the following 18 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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