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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 11, Pages 88–94
(Mi pjtf8875)
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Formation of $p$–$n$ junctions during solid-state chemical reactions involving superionic crystals
I. Kh. Akopyanab, M. V. Zamoryanskayaab, Ya. V. Kuznetsovaab, B. V. Novikovab, D. A. Tsagan-Mandzhievaab a V. A. Fock Institute of Physics, Saint-Petersburg State University
b Ioffe Institute, St. Petersburg
Abstract:
It is established that semiconducting heterojunctions can be formed in the AgI–Ag$_2$HgI$_4$–HgI$_2$ and CuI–Cu$_2$HgI$_4$–HgI$_2$ systems obtained as a result of diffusion-controlled solid-state chemical reactions. Concentration profiles of diffusant ions in the obtained structures have been determined using the exciton spectroscopy and electron-probe microanalysis techniques. The current-voltage characteristics of heteroboundaries between ternary compounds and binary crystals have been measured in the dark and under illumination.
Received: 27.02.2012
Citation:
I. Kh. Akopyan, M. V. Zamoryanskaya, Ya. V. Kuznetsova, B. V. Novikov, D. A. Tsagan-Mandzhieva, “Formation of $p$–$n$ junctions during solid-state chemical reactions involving superionic crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:11 (2012), 88–94; Tech. Phys. Lett., 38:6 (2012), 540–543
Linking options:
https://www.mathnet.ru/eng/pjtf8875 https://www.mathnet.ru/eng/pjtf/v38/i11/p88
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