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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 11, Pages 88–94 (Mi pjtf8875)  

Formation of $p$$n$ junctions during solid-state chemical reactions involving superionic crystals

I. Kh. Akopyanab, M. V. Zamoryanskayaab, Ya. V. Kuznetsovaab, B. V. Novikovab, D. A. Tsagan-Mandzhievaab

a V. A. Fock Institute of Physics, Saint-Petersburg State University
b Ioffe Institute, St. Petersburg
Abstract: It is established that semiconducting heterojunctions can be formed in the AgI–Ag$_2$HgI$_4$–HgI$_2$ and CuI–Cu$_2$HgI$_4$–HgI$_2$ systems obtained as a result of diffusion-controlled solid-state chemical reactions. Concentration profiles of diffusant ions in the obtained structures have been determined using the exciton spectroscopy and electron-probe microanalysis techniques. The current-voltage characteristics of heteroboundaries between ternary compounds and binary crystals have been measured in the dark and under illumination.
Received: 27.02.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 6, Pages 540–543
DOI: https://doi.org/10.1134/S1063785012060028
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: I. Kh. Akopyan, M. V. Zamoryanskaya, Ya. V. Kuznetsova, B. V. Novikov, D. A. Tsagan-Mandzhieva, “Formation of $p$$n$ junctions during solid-state chemical reactions involving superionic crystals”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:11 (2012), 88–94; Tech. Phys. Lett., 38:6 (2012), 540–543
Citation in format AMSBIB
\Bibitem{AkoZamKuz12}
\by I.~Kh.~Akopyan, M.~V.~Zamoryanskaya, Ya.~V.~Kuznetsova, B.~V.~Novikov, D.~A.~Tsagan-Mandzhieva
\paper Formation of $p$--$n$ junctions during solid-state chemical reactions involving superionic crystals
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 11
\pages 88--94
\mathnet{http://mi.mathnet.ru/pjtf8875}
\elib{https://elibrary.ru/item.asp?id=20327900}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 6
\pages 540--543
\crossref{https://doi.org/10.1134/S1063785012060028}
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