Creating micron regions with modified luminescent properties and topology on CdS$_x$Se$_{1-x}$ films by laser annealing

Laser annealing of thin polycrystalline films of CdS$_x$Se$_{1-x}$ solid solutions has a threshold character, modifies the local topological relief, and produces a jumplike change in the luminescent properties of the material in the processed region. The possibility of creating local regions with sharply modified physical properties on a micron-precise scale makes the proposed technique a promising tool for the production of semi-conductor sensor chips.