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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 13, Pages 27–34
(Mi pjtf8894)
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This article is cited in 4 scientific papers (total in 4 papers)
Application of diamond-like carbon films to increase transmission of semi-insulating GaAs crystals in the IR spectral range
N. I. Klyuiabc, A. I. Liptugaabc, V. B. Lozinskiiabc, A. N. Lukyanovabc, A. P. Oksanychabc, V. A. Terbanabc a Institute of Semiconductor Physics NAS, Kiev
b Kremenchug National University
c Silicon Ltd, Svetlovodsk, 27507, Ukraine
Abstract:
The effect of treatments in plasmas of different gases and subsequent deposition of diamond-like carbon films (DCFs) on the transmission of semi-insulating GaAs crystals in the IR spectral range has been analyzed. It is shown that deposition of 1- to 1.5-$\mu$m DCFs makes it possible to increase the GaAs transmission in the range of 4–15 $\mu$m and that preliminary treatment in H$^+$ or Ar$^+$ plasma increases the optical transmission of the DCF-GaAs structure. A mechanism is proposed to explain the effect of plasma treatment on the optical transmission of semi-insulating GaAs in the IR spectral range.
Received: 07.03.2012
Citation:
N. I. Klyui, A. I. Liptuga, V. B. Lozinskii, A. N. Lukyanov, A. P. Oksanych, V. A. Terban, “Application of diamond-like carbon films to increase transmission of semi-insulating GaAs crystals in the IR spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:13 (2012), 27–34; Tech. Phys. Lett., 38:7 (2012), 609–612
Linking options:
https://www.mathnet.ru/eng/pjtf8894 https://www.mathnet.ru/eng/pjtf/v38/i13/p27
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