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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 13, Pages 35–40 (Mi pjtf8895)  
This article is cited in 2 scientific papers (total in 2 papers)

Effect of gain saturation on the current-power characteristic of semiconductor laser

G. S. Sokolovskii, V. V. Dyudelev, A. G. Deryagin, V. I. Kuchinskii

Ioffe Institute, St. Petersburg
Full-text PDF (112 kB) Citations (2)
Abstract: It is shown that, when temperature effects are excluded, even a small bend of the current-power characteristic of a semiconductor laser caused by gain saturation indicates that the carrier concentration that is necessary to maintain lasing should be increased by several times (i.e., that the effective lasing threshold significantly increases).
Received: 06.02.2012
English version:
Technical Physics Letters, 2012, Volume 38, Issue 7, Pages 613–615
DOI: https://doi.org/10.1134/S1063785012070139
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: G. S. Sokolovskii, V. V. Dyudelev, A. G. Deryagin, V. I. Kuchinskii, “Effect of gain saturation on the current-power characteristic of semiconductor laser”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:13 (2012), 35–40; Tech. Phys. Lett., 38:7 (2012), 613–615
Citation in format AMSBIB
\Bibitem{SokDyuDer12}
\by G.~S.~Sokolovskii, V.~V.~Dyudelev, A.~G.~Deryagin, V.~I.~Kuchinskii
\paper Effect of gain saturation on the current-power characteristic of semiconductor laser
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2012
\vol 38
\issue 13
\pages 35--40
\mathnet{http://mi.mathnet.ru/pjtf8895}
\elib{https://elibrary.ru/item.asp?id=20327920}
\transl
\jour Tech. Phys. Lett.
\yr 2012
\vol 38
\issue 7
\pages 613--615
\crossref{https://doi.org/10.1134/S1063785012070139}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
    Related articles in Google Scholar: Russian articles, English articles
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