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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 16, Pages 1–8
(Mi pjtf8927)
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This article is cited in 4 scientific papers (total in 4 papers)
Studying the morphology of hemispherical-grain polycrystalline silicon films
A. V. Novakab, Yu. V. Nikol'skiiab, S. N. Fokichevab a National Research University of Electronic Technology
b JSC "Angstrem", Moscow, Zelenograd
Abstract:
The effect of the deposition temperature on the morphology of hemispherical-grain polycrystalline silicon (HSG-Si) films obtained by low-pressure chemical vapor deposition (LPCVD) has been studied using atomic force microscopy. The dependences of the relative surface area increment, density of grains, average height and lateral size of grains, mean square roughness, and correlation length on the deposition temperature have been determined in an interval used for the LPCVD growth of HSG-Si films.
Received: 26.03.2012
Citation:
A. V. Novak, Yu. V. Nikol'skii, S. N. Fokichev, “Studying the morphology of hemispherical-grain polycrystalline silicon films”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:16 (2012), 1–8; Tech. Phys. Lett., 38:8 (2012), 732–735
Linking options:
https://www.mathnet.ru/eng/pjtf8927 https://www.mathnet.ru/eng/pjtf/v38/i16/p1
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