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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2012, Volume 38, Issue 16, Pages 69–77
(Mi pjtf8935)
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This article is cited in 1 scientific paper (total in 1 paper)
Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer
M. V. Dorokhin, E. I. Malysheva, A. V. Zdoroveyshchev, Yu. A. Danilov Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
Light-emitting diode structures with an InGaAs/GaAs quantum well and a ferromagnetic GaMnSb layer as a $p$-type semiconductor have been manufactured and investigated. A magnetic-field-induced circular polarization of electroluminescence in these structures has been obtained, the degree of which (0.012 at 0.37 T) is almost constant in the temperature interval of 10–50 K. Circular polarization is determined by the injection of spin-polarized holes from the ferromagnetic GaMnSb layer.
Received: 06.03.2012
Citation:
M. V. Dorokhin, E. I. Malysheva, A. V. Zdoroveyshchev, Yu. A. Danilov, “Spin-polarized light-emitting diodes based on heterostructures with a GaAs/InGaAs/GaAs quantum well and ferromagnetic GaMnSb injection layer”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 38:16 (2012), 69–77; Tech. Phys. Lett., 38:8 (2012), 764–767
Linking options:
https://www.mathnet.ru/eng/pjtf8935 https://www.mathnet.ru/eng/pjtf/v38/i16/p69
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